LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS

被引：182

作者：

HEIM, U ^{[1
]}

HIESINGE.P ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 66卷 / 02期

关键词：

D O I：

10.1002/pssb.2220660208

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：461 / 470

页数：10

共 26 条

[1]

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[3]

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BEBB, HB .

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[6] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

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[7] NEAR BAND-EDGE OPTICAL-ABSORPTION IN PURE GAAS [J].

HILL, DE .

SOLID STATE COMMUNICATIONS, 1972, 11 (09) :1187-&

[8] EFFECT OF ELECTRON-EXCITON COLLISIONS ON FREE-EXCITON LINEWIDTH IN EPITAXIAL GAAS [J].

LEITE, RCC ;

SHAH, J ;

GORDON, JP .

PHYSICAL REVIEW LETTERS, 1969, 23 (23) :1332-&

[9]

MORETH B, 1973, VERH DPG, V3, P303

[10]

MORGAN TN, 1974, PRIVATE COMMUNICATIO

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