PULSED LASER MELTING OF SI-AS SUPERSATURATED SOLID-SOLUTIONS

被引：9

作者：

BAERI, P

REITANO, R

MALVEZZI, AM

BORGHESI, A

机构：

[1] UNIV PAVIA, DIPARTIMENTO ELETTR, I-27100 PAVIA, ITALY

[2] UNIV PAVIA, DEPARTIMENTO FIS, I-27100 PAVIA, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.345606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The T0 curve of the Si-As system has been determined by pulsed laser melting of supersaturated solid solutions in the As concentration range between 0 and 12.5 at. %. Samples were irradiated with both 20-ns 347-nm-wavelength and 20-ps 532-nm-wavelength laser pulses, and surface melting has been revealed by time-resolved reflectivity measurements. Melting temperatures of the solutions have been derived from the measurement of the energy absorbed at melting threshold. Some implications of our results on the thermodynamics of the Si-As system are discussed.

引用

页码：1801 / 1804

页数：4

共 25 条

[21] EXCESS FREE ENERGIES IN GE, SI AND GA BINARY SYSTEMS - ALPHA-PARAMETER APPROACH [J].