FAST AND EFFICIENT PHOTON-GATED BURNING OF PERSISTENT SPECTRAL HOLES IN DONOR-ACCEPTOR ELECTRON-TRANSFER SYSTEMS

被引：12

作者：

SUZUKI, H

SHIMADA, T

NISHI, T

HIRATSUKA, H

机构：

[1] NTT Opto-Electronics Laboratories, Tokai, Ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Efficient hole burning; Fast hole burning; Halogenated anthracene derivatives; Photochemical hole burning; Photon-gated donor-acceptor electron -transfer; Tetraphenylporphine;

D O I：

10.1143/JJAP.29.L1146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely fast and highly efficient burning of persistent spectral holes was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) film. Persistent spectral holes were burnt when the system was irradiated with two 2.5 ns pulses [energy: 0.6 mJ/(cm2·pulse)], or with two 1 or10 µs pulses [energy: 60 pJ/(cm2·pulse)] at about 645 nm. The hole formation yield is independent of the time interval between frequency-selective and gating excitation up to as long as 2 min, suggesting the participation of a stable intermediate state in the reaction. © 1990 The Japan Society of Applied Physics.

引用

页码：L1146 / L1149

页数：4

共 15 条

[1]

ALBINI A, 1988, PHOTOINDUCED ELECT C, P88

[2] PHOTON-GATED SPECTRAL HOLE BURNING BY DONOR-ACCEPTOR ELECTRON-TRANSFER [J].