INSITU STUDIES ON OXIDATION OF COPPER-FILMS BY USING ATR TECHNIQUE

被引：14

作者：

TAJIMA, N

FUKUI, M

SHINTANI, Y

TADA, O

机构：

[1] Univ of Tokushima, Dep of Electronic, Engineering, Tokushima, Jpn, Univ of Tokushima, Dep of Electronic Engineering, Tokushima, Jpn

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1985年 / 54卷 / 11期

关键词：

FILMS; -; Metallic; LIGHT; Reflection;

D O I：

10.1143/JPSJ.54.4236

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Oxidation studies of copper films at room temperature have been carried out by measuring the ATR (attenuated total reflection) spectra involving information about surface plasmon polariton characteristics. Oxidation is initially rapid, but after 10 to 20 minutes drops to a negligible value, a stable film being formed approximately 2. 7 nm thick. It has been furthermore confirmed that copper oxide films formed in 20 Torr of oxygen at room temperature are composed of a mixture of Cu and CuO//0//. //6//7 (gross defect structure of Cu//2O) in the first stage of oxidation, but the final composition becomes CuO//0//. //6//7.

引用

页码：4236 / 4240

页数：5

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