ZINC DIFFUSION IN GASB

被引：26

作者：

SUNDARAM, VS

GRUENBAUM, PE

机构：

[1] Boeing Defense and Space Group, Seattle, WA 98124-2499

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the diffusion behavior of zinc in n-type GaSb in the temperature range of 450-540-degrees-C. The diffusion was carried out in a closed box system using a zinc-gallium source. The diffusion profiles were obtained using secondary ion mass spectrometry. From the diffusion profiles, concentration dependent diffusion coefficients were calculated using Boltzmann-Montano analysis. These data have been qualitatively interpreted in terms of the interstitial-substitutional diffusion model originally proposed for zinc diffusion in GaAs. Finally, diffused junction GaSb solar cells were fabricated and their performance evaluated.

引用

页码：3787 / 3789

页数：3

共 12 条

[1]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[2] ZN DIFFUSION IN GAAIASSB AND GASB [J].