2-ELECTRON PHOTOIONIZATION FROM DEEP STATES IN SEMICONDUCTORS

被引：7

作者：

MORGAN, TN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 05期

关键词：

D O I：

10.1007/BF02660187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1029 / 1036

页数：8

共 11 条

[1]

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[2] EXTRINSIC ELECTROABSORPTION - N SYMMETRY IN GAP [J].

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BURNHAM, RD .

PHYSICAL REVIEW LETTERS, 1975, 34 (17) :1088-1091

[3] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

HENRY, CH ;

FROSCH, CJ .

PHYSICAL REVIEW, 1968, 168 (03) :812-&

[4] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].

DEAN, PJ ;

KAMINSKY, G ;

ZETTERSTROM, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+

[5]

GRIMMEISS HG, 1974, 12TH P INT C PHYS SE, P386

[6] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].

HENRY, CH ;

KUKIMOTO, H ;

MILLER, GL ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507

[7]

HENRY CH, 1974, 12TH P INT C PHYS SE, P411

[8] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J].

KUKIMOTO, H ;

HENRY, CH ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2486-2499

[9]

MARTIN RL, ELECTRON SPECTROSCOP

[10]

MARTIN RR, TO BE PUBLISHED

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