EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE

被引：411

作者：

HEIMAN, FP

WARFIELD, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 04期

关键词：

D O I：

10.1109/T-ED.1965.15475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：167 / &

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