GROWTH CONDITION INDEPENDENCE OBSERVED FOR DX CENTER IN SI-DOPED ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

ASHIZAWA, Y

WATANABE, MO

机构：

[1] Toshiba Research & Development, Cent, Kawasaki, Jpn, Toshiba Research & Development Cent, Kawasaki, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 11期

关键词：

ALUMINUM GALLIUM ARSENIDE - SILICON DOPING;

D O I：

10.1143/JJAP.24.L883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L883 / L884

页数：2

共 12 条

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