A LOW DAMAGE, LOW CONTAMINANT PLASMA PROCESSING SYSTEM UTILIZING ENERGY CLEAN TECHNOLOGY

被引：20

作者：

GOTO, HH

SASAKI, M

OHMI, T

SHIBATA, T

YAMAGAMI, A

OKAMURA, N

KAMIYA, O

机构：

[1] Applied Materials Japan, Narita

[2] Central Laboratory, Alps Electric, Sendai

[3] Department of Electronics, Faculty of Engineering, Tohoku University, Sendai 980

[4] Thin Film Technology Division, Canon Inc, Tokyo 146, 03-758-2111

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1991年 / 4卷 / 02期

关键词：

D O I：

10.1109/66.79723

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The control of ion bombardment energy is extremely important in plasma processing for ULSI device manufacturing. An advanced plasma system is proposed using energy clean technology [1] that is capable of subtle control of ion impact energy under very low pressure and magnetron enhancement. Careful and extensive probe measurements were carried out to determine the effects of magnetic field, plasma excitation frequency, dc-biasing of plasma confining cylinder (shield), dc-biasing of electrodes and secondary RF excitation on spatial distribution of potential. The study found that the substrate dc potential can be effectively controlled by dc-biasing or RF-biasing using an external dc power source or a secondary RF excitation, respectively. As a consequence, the wafer surface damage induced by the energy ions can be minimized by directly controlling the potential difference between plasma and substrate. The study also found that dc-biasing of the shield is very effective in minimizing the chamber material contamination, i.e., the contamination levels of both iron and copper atoms measured by total reflection X-ray fluorescence spectroscopy.

引用

页码：111 / 121

页数：11

共 38 条

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