SPECTRAL HOLE-BURNING ON SILICON PHTHALOCYANINES ISOLATED IN AN ARGON MATRIX

被引:5
作者
BRAUN, D
CEULEMANS, A
DICK, B
KONAMI, H
机构
[1] UNIV REGENSBURG,INST PHYS & THEORET CHEM,D-93040 REGENSBURG,GERMANY
[2] TOHOKU UNIV,INST CHEM REACT SCI,AOBA KU,SENDAI,MIYAGI 980,JAPAN
关键词
D O I
10.1016/0009-2614(94)87101-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Irradiation of the monomeric phthalocyanine HexSiO(SiPc)OSiHex3 isolated in an Ar matrix at T = 13 K with the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located about 700 cm-1 above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise determination of several excited-state vibrational frequencies. For dimeric Hex3SiO(SiPC-O-SiPc)OSiHex3 in the same matrix the changes in the absorption spectra after irradiation into the Q band reveal an out-of-plane polarization of the bands which are not present in the monomer absorption. This points to substantial charge-resonance contributions to the excitonic coupling between the two SiPc units in dimeric Hex3SiO(SiPc-O-SiPc)OSiHex3.
引用
收藏
页码:398 / 403
页数:6
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