QUASI-MONOLAYER DEPOSITION OF SILICON DIOXIDE

被引：46

作者：

GASSER, W ^{[1
]}

UCHIDA, Y ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] NISHI TOKYO UNIV,DEPT ELECTR & INFORMAT SCI,YAMANASHI 40901,JAPAN

来源：

THIN SOLID FILMS | 1994年 / 250卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90188-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiO2 films were deposited layer by layer from a new silicon source gas, i.e. tetra-iso-cyanate-silane (Si(NCO)(4)). An average growth rate of about 0.17 nm per cycle was achieved by a cyclic process of alternating reaction of the substrate surface with Si(NCO)(4) and H2O respectively. The detailed deposition characteristics together with chemical and physical properties of the deposited Nm were evaluated with ellipsometry, Fourier transform IR spectroscopy, X-ray photoelectron spectroscopy and Auger electron spectroscopy

引用

页码：213 / 218

页数：6

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