ELECTRO-ABSORPTION EFFECTS AT BAND EDGES OF SILICON AND GERMANIUM

被引：117

作者：

FROVA, A

HANDLER, P

GERMANO, FA

ASPNES, DE

机构：

来源：

PHYSICAL REVIEW | 1966年 / 145卷 / 02期

关键词：

D O I：

10.1103/PhysRev.145.575

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：575 / &

共 36 条

[1] ABRAMOWITZ M, 1964, HANDBOOK MATHEMAT ED
[2] ANTOSIEWICZ HA, APPL MATH, V55, P475
[3] ANTOSIEWICZ HA, 1964, HANDBOOK MATHEMATICA
[4] OPTICAL ABSORPTION IN AN ELECTRIC FIELD
CALLAWAY, J
[J]. PHYSICAL REVIEW, 1963, 130 (02): : 549 - &
[5] OPTICAL ABSORPTION IN ELECTRIC FIELD
CALLAWAY, J
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : A998 - +
[6] PHONON-ASSISTED ELECTROABSORPTION
CHESTER, M
FRITSCHE, L
[J]. PHYSICAL REVIEW, 1965, 139 (2A): : A518 - &
[7] ELECTROABSORPTION SPECTRUM IN SILICON
CHESTER, M
WENDLAND, PH
[J]. PHYSICAL REVIEW LETTERS, 1964, 13 (06) : 193 - &
[8] CHESTER M, 1965, PHYS REV A, V140, P1384
[9] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS
CHYNOWETH, AG
THOMAS, DE
LOGAN, RA
[J]. PHYSICAL REVIEW, 1962, 125 (03): : 877 - &
[10] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM
DEXTER, RN
ZEIGER, HJ
LAX, B
[J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644