ALLOY COMPOSITION AND FLOW-RATES IN GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP GROWN BY MO-CVD

被引：4

作者：

SUGOU, S

KAMEYAMA, A

KATSUDA, H

MIYAMOTO, Y

FURUYA, K

SUEMATSU, Y

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 24期

关键词：

D O I：

10.1049/el:19830703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1036 / 1037

页数：2

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共 5 条

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[5] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.5 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION (LP-MO CVD) [J].

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