PARYLENE-GATE ISFET AND CHEMICAL MODIFICATION OF ITS SURFACE WITH CROWN-ETHER COMPOUNDS

被引：30

作者：

MATSUO, T ^{[1
]}

NAKAJIMA, H ^{[1
]}

OSA, T ^{[1
]}

ANZAI, J ^{[1
]}

机构：

[1] TOHOKU UNIV,INST PHARMACEUT,SENDAI,MIYAGI 980,JAPAN

来源：

SENSORS AND ACTUATORS | 1986年 / 9卷 / 02期

关键词：

The authors express their sincere appreciation to Mr Yuklo Katayanagul of the Department of Electromc Engmeermg; Tohoku University; for his helpful aswstance m the fabrication and measurement of the chemlcally-modtiled ISFETs This research was supported m part by the 13th Mltsublshl Foundation Grant m Natural Sciences; 1982;

D O I：

10.1016/0250-6874(86)80013-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：115 / 123

页数：9

共 4 条

[1] CHARACTERISTICS OF REFERENCE ELECTRODES USING A POLYMER GATE ISFET [J].