SURFACE-EMITTING 2ND-HARMONIC GENERATION IN A SEMICONDUCTOR VERTICAL RESONATOR

被引：28

作者：

LODENKAMPER, R

BORTZ, ML

FEJER, MM

BACHER, K

HARRIS, JS

机构：

[1] Stanford University, Stanford, CA

来源：

OPTICS LETTERS | 1993年 / 18卷 / 21期

关键词：

D O I：

10.1364/OL.18.001798

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We experimentally demonstrate a 240-fold increase in the efficiency of an AlGaAs/AlAs surface-emitting second-harmonic generation device by embedding the waveguide core in a monolithic vertical resonant cavity. Calculations indicate that conversion efficiencies of several percent per watt for second-harmonic generation of green or blue light may be expected in an optimized semiconductor resonant vertical-cavity surface emitter.

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页码：1798 / 1800

页数：3

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