GIANT MAGNETORESISTANCE DUE TO SPIN-DEPENDENT INTERFACE SCATTERING

被引：24

作者：

NESBET, RK

机构：

[1] Div. of Res., IBM Almaden Res. Center, San Jose, CA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 31期

关键词：

D O I：

10.1088/0953-8984/6/31/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin-dependent electrical resistivity due to scattering by displaced interface atoms has been computed for a layered CuCo superlattice, using full-potential multiple-scattering theory with no free parameters. The magnetoresistance ratio DELTAR/R(up up) obtained for this scattering mechanism is 25.03. When interface resistivity, weighted by interpretation concentration c congruent-to 0.10, is combined with bulk resistivity, DELTAR/R is in the expected experimental range for adjacent CuCoCu layers. This resistance mechanism produces spin-dependent steady-state chemical potentials, relevant to the bipolar spin switch.

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页码：L449 / L454

页数：6

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