DETERMINATION OF THE FIXED OXIDE CHARGE AND INTERFACE TRAP DENSITIES FOR BURIED OXIDE LAYERS FORMED BY OXYGEN IMPLANTATION

被引：16

作者：

BRADY, FT ^{[1
]}

LI, SS ^{[1
]}

BURK, DE ^{[1
]}

KRULL, WA ^{[1
]}

机构：

[1] HARRIS SEMICOND, MELBOURNE, FL 32901 USA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.99262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：886 / 888

页数：3

共 20 条

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