STRUCTURAL PHASE-TRANSITION IN THE LAYER SEMICONDUCTOR PBI2 INDUCED BY LASER IRRADIATION

Two common modifications have been studied: 2H-polytype, wherein all the layer packets are translationally equivalent, and 4H-polytype, wherein each of the first and third layer packets is in an equivalent position, while the second packet is slightly displaced and turns through 180 degree . During pulsed laser annealing, which occurs by thermal melting and recrystallization mechanism, the low temperature phase transition 4H yields 2H is due to the loss of thermodynamical stability of the initial state and is of a non-thermal nature.