HALL-EFFECT OF PLASTICALLY DEFORMED GAAS

[1] DISLOCATION VELOCITIES IN GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745

[2] CATHODOLUMINESCENCE AND ELECTRICAL ANISOTROPY FROM ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN PLASTICALLY DEFORMED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2588 - 2603

[3] FRANK W, 1985, UNPUB 12TH P INT S G

[4] GATOS HC, 1960, PROPERTIES ELEMENTAL, V5, P54

[5] GRUSON B, 1985, THESIS LILLE

[6] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J]. APPLIED PHYSICS, 1980, 21 (03): : 257 - 261

[7] LABUSCH R, 1980, DISLOCATIONS SOLIDS, pCH20

[8] LABUSCH R, 1979, J PHYS, V40, P75

[9] NATIVE HOLE TRAP IN BULK GAAS AND ITS ASSOCIATION WITH THE DOUBLE-CHARGE STATE OF THE ARSENIC ANTISITE DEFECT [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 929 - 931

[10] DEFORMATION OF SINGLE-CRYSTALS OF GALLIUM-ARSENIDE [J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) : 1218 - 1232

[1] DISLOCATION VELOCITIES IN GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745

[2] CATHODOLUMINESCENCE AND ELECTRICAL ANISOTROPY FROM ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN PLASTICALLY DEFORMED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2588 - 2603

[3] FRANK W, 1985, UNPUB 12TH P INT S G

[4] GATOS HC, 1960, PROPERTIES ELEMENTAL, V5, P54

[5] GRUSON B, 1985, THESIS LILLE

[6] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J]. APPLIED PHYSICS, 1980, 21 (03): : 257 - 261

[7] LABUSCH R, 1980, DISLOCATIONS SOLIDS, pCH20

[8] LABUSCH R, 1979, J PHYS, V40, P75

[9] NATIVE HOLE TRAP IN BULK GAAS AND ITS ASSOCIATION WITH THE DOUBLE-CHARGE STATE OF THE ARSENIC ANTISITE DEFECT [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 929 - 931

[10] DEFORMATION OF SINGLE-CRYSTALS OF GALLIUM-ARSENIDE [J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) : 1218 - 1232