LASER DIRECT WRITING OF TITANIUM SILICIDE THIN-FILMS

被引：2

作者：

REISSE, G ^{[1
]}

GANSICKE, F ^{[1
]}

FISCHER, A ^{[1
]}

JOHANSEN, H ^{[1
]}

机构：

[1] MAX PLANCK INST MIKROSTRUKTURPHYS,O-4050 HALLE,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90544-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Investigations concerning the laser-induced chemical vapour deposition of TiSi2 thin films from SiH4 and TiCl4 using a direct writing method are presented. A CO2-laser at lambda = 10.6 mum and an argon ion laser in the VIS (488-527 nm, multiline mode) were used for the preferably thermal deposition on SiO2 and c-Si substrates. The influence of the deposition parameters gas composition, laser power, scan velocity and laser wavelength on structural, geometric, and electrical properties is reported.

引用

页码：412 / 417

页数：6