MOTT TRANSITION FOR PICOSECOND ALL-OPTICAL NOR GATE IN CDSE

被引:8
作者
COLLET, J
AMAND, T
机构
[1] INSA, Toulouse, Fr, INSA, Toulouse, Fr
关键词
LOGIC CIRCUITS - LOGIC DEVICES - Gates;
D O I
10.1016/0038-1098(86)90203-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using picosecond time resolved spectroscopy, we study the extinction kinetics of the optical transmission of CdSe platelets induced by strong optical pumping. We investigate the all-optical gate capabilities (resulting from the bandgap shrinkage due to the Mott transition) for laser beams the wavelength of which ranges from 676 to 678 nm. The electron-hole plasma density necessary to enable the optical switching is determined ( rho approx. 2 multiplied by 10**1**7 cm** minus **3 at 20 K). The switch-off time (i. e. the transparency recovery time) is also studied at different wavelengths by picosecond spectroscopy.
引用
收藏
页码:173 / 176
页数:4
相关论文
共 24 条
[1]  
AMAND T, PHYS REV B
[2]  
[Anonymous], 1982, EXCITONS
[3]   THEORY OF ELECTRON-HOLE LIQUID IN SEMICONDUCTORS [J].
BENI, G ;
RICE, TM .
PHYSICAL REVIEW B, 1978, 18 (02) :768-785
[4]   INTRINSIC ABSORPTIVE OPTICAL BISTABILITY IN CDS [J].
BOHNERT, K ;
KALT, H ;
KLINGSHIRN, C .
APPLIED PHYSICS LETTERS, 1983, 43 (12) :1088-1090
[5]   EXCITON-PLASMA TRANSITION IN GAAS [J].
COLLET, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (04) :417-422
[6]   PICOSECOND SPECTROSCOPY OF EXCITONS AND BIEXCITONS IN ZNO AT HIGH-DENSITY [J].
COLLET, J ;
AMAND, T .
PHYSICAL REVIEW B, 1986, 33 (06) :4129-4135
[7]  
COLLET J, 1981, PHYS STATUS SOLIDI B, V103, P307
[8]   PICOSECOND LUMINESCENCE OF CDS AND CDSE AT HIGH-EXCITATION [J].
CORNET, A ;
COLLET, J ;
AMAND, T ;
PUGNET, M ;
BROUSSEAU, M ;
RAZBIRIN, BS .
JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) :609-612
[9]  
EHRENREICH H, 1975, SOLID STATE PHYSICS, V32
[10]   TRANSIENT OPTICAL-SPECTRA OF A DENSE EXCITON GAS IN A DIRECT-GAP SEMICONDUCTOR [J].
FEHRENBACH, GW ;
SCHAFER, W ;
TREUSCH, J ;
ULBRICH, RG .
PHYSICAL REVIEW LETTERS, 1982, 49 (17) :1281-1284