GENERALIZED-MODEL OF THE ISOTHERMAL VAPOR-PHASE EPITAXY OF (HG,CD)TE

被引：22

作者：

DJURIC, Z ^{[1
]}

PIOTROWSKY, J ^{[1
]}

机构：

[1] INST PLASMA PHYS & LASER MICROFUS,PL-00908 WARSAW 49,POLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 21期

关键词：

D O I：

10.1063/1.98548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1699 / 1701

页数：3

共 15 条

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[3] INFRARED PHOTOVOLTAIC DETECTORS UTILIZING HG1-XMNX TE AND HG1-X-YCDXMNY TE ALLOYS [J].

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[4]

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[6] HIGH-PERFORMANCE PHOTOVOLTAIC INFRARED DEVICES IN HG1-XCDXTE ON GAAS [J].

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[7]

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[8]

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[9] COMPOSITION AND THICKNESS CONTROL OF CDXHG1-XTE LAYERS GROWN BY OPEN TUBE ISOTHERMAL VAPOR-PHASE EPITAXY [J].

PIOTROWSKI, J ;

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GALUS, W ;

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[10]

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