TEMPERATURE-DEPENDENCE OF PLANAR CHANNELING IN TRANSMISSION EXPERIMENTS

被引：4

作者：

CAMPISANO, SU

FOTI, G

RIMINI, E

DELLAMEA, G

DRIGO, AV

LORUSSO, S

MAZZOLDI, P

BENTINI, GG

机构：

[1] UNIV CATANIA,IST STRUTTURA MAT,CATANIA,ITALY

[2] UNIV PADOVA,IST FIS,PADOVA,ITALY

[3] CNR,LAMEL,BOLOGNA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 132卷 / JAN-F期

关键词：

D O I：

10.1016/0029-554X(76)90731-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：169 / 173

页数：5

共 12 条

[1]

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RIMINI, E .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :163-167

[7] MULTIPLE-SCATTERING AND PLANAR DECHANNELING IN SILICON AND GERMANIUM [J].

FELDMAN, LC ;

APPLETON, BR .

PHYSICAL REVIEW B, 1973, 8 (03) :935-951

[8] TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J].

FOTI, G ;

GRASSO, F ;

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RIMINI, E .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07) :2169-+

[9] TEMPERATURE EFFECTS ON CHANNELING OF PROTONS IN SILICON CRYSTAL [J].

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MANNAMI, M ;

SAKURAI, T .

PHYSICS LETTERS A, 1969, A 29 (06) :332-&

[10] CHANNELING AND RELATED EFFECTS IN MOTION OF CHARGED-PARTICLES THROUGH CRYSTALS [J].

GEMMELL, DS .

REVIEWS OF MODERN PHYSICS, 1974, 46 (01) :129-227

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