DOMAIN INVERSION IN LINBO3 USING DIRECT ELECTRON-BEAM WRITING

被引：100

作者：

NUTT, ACG

GOPALAN, V

GUPTA, MC

机构：

[1] Research Laboratories, Eastman Kodak Company, Rochester

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 3-mu-m periodic domain-inverted pattern on the C- face of LiNbO3 has been written using direct electron-beam writing for first-order gratings used in second harmonic generation. The domain formation mechanism has been investigated, especially the shape of the domain and need for a conductor on the C+ face during the electron-beam writing process.

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页码：2828 / 2830

页数：3

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