1.3-MU-M WAVELENGTH, INGAASP-INP FOLDED-CAVITY SURFACE-EMITTING LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：11

作者：

CHAO, CP

SHIAU, GJ

FORREST, SR

机构：

[1] Advanced Technology Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton., NJ

[2] Advanced Technology Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ

[3] Department of Materials Science, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 12期

关键词：

D O I：

10.1109/68.392229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.3-mu m wavelength, strained multiple quantum well InGaAsP-InP folded-cavity surface-emitting laser was fabricated using CH4:H-2 reactive ion etching to form the 45 degrees angled vertical output facet. A pulsed threshold current of 45 mA and a 20% efficiency for the surface-emitted light were achieved for 550 mu m-long hv 5 mu m-wide devices, The threshold current is the lowest reported for folded-cavity surface-emitting lasers operating at this wavelength, making the devices suitable for many optoelectronic smart pixel and interconnection applications. To our knowledge, this is the first demonstration of an InP-based folded-cavity structure using CH4:H-2 reactive ion etching.

引用

页码：1406 / 1408

页数：3

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