DOUBLE CROSS-SLIP IN SILICON

被引：5

作者：

GEORGE, A ^{[1
]}

CHAMPIER, G ^{[1
]}

机构：

[1] INST NATL POLYTECHN LORRAINE,INSMIM,LAB PHYS,NANCY,FRANCE

来源：

PHILOSOPHICAL MAGAZINE | 1975年 / 31卷 / 04期

关键词：

D O I：

10.1080/14786437508229647

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：961 / 967

页数：7

共 12 条

[1]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2]

Authier A., 1970, Modern diffraction and imaging techniques in material science, P481

[3]

AUTHIER A, 1970, ADV XRAY ANALYSIS, V10, P9

[4]

George A., 1973, Crystal Lattice Defects, V4, P29

[5]

Lang A. R., 1970, Modern diffraction and imaging techniques in material science, P407

LANG, AR .

[7]

LONGO S, 1972, THESIS PARIS 6

[8]

LOW JR, 1962, ACTA METALL MATER, V10, P215

[9] Dislocation Sources and Interactions in Silicon [J].

Miltat, J. E. A. ;

Bowen, D. K. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (02) :431-445

[10] DISLOCATION PILE-UPS IN SILICON [J].

MILTAT, JEA ;

CHRISTIAN, JW .