TIN PHOSPHIDE AS A PHOSPHORUS BEAM SOURCE FOR MOLECULAR-BEAM EPITAXY

被引:7
作者
CHAI, YG
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10.1063/1.95472
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O59 [应用物理学];
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页码:985 / 987
页数:3
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共 16 条
[1]   PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].
ANTYPAS, GA .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65
[2]   SOLUBILITIES OF INP AND CDS IN CD, SN, IN, BI AND PB [J].
BUEHLER, E ;
BACHMANN, KJ .
JOURNAL OF CRYSTAL GROWTH, 1976, 35 (01) :60-64
[3]   ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703
[4]   A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY [J].
CHOW, R ;
CHAI, YG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :49-54
[5]   GROWTH OF INDIUM-PHOSPHIDE FILMS FROM IN AND P2 BEAMS IN ULTRAHIGH-VACUUM [J].
FARROW, RFC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (11) :L121-L124
[6]  
HIERL TL, 1982, 2ND INT S MBE REL CL, P147
[7]   PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
IKEDA, M ;
ASAHI, H ;
OKAMOTO, H .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :481-484
[8]  
Kubaschewski O., 1979, METALLURGICAL THERMO
[9]  
LIPPENS D, 1982, ELECTRON DEVIC LETT, V3, P213
[10]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J].
MCFEE, JH ;
MILLER, BI ;
BACHMANN, KJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :259-272