MICROSTRUCTURE AND ORIENTATION EFFECTS IN DIAMOND THIN-FILMS

The microstructure and orientation of diamond thin films grown by plasma assisted chemical vapor deposition have been studied as functions of growth temperature, substrate identity, and substrate pre-treatment. Results indicate that for growth temperatures below 650-degrees-C, competition between film growth and etching can lead to preferential (110) oriented films on a variety of substrate materials. This orientation can be globally sustained during growth by the occurrence of (111) planar defects.