EPITAXIAL-GROWTH OF ALPHA-FE FILMS ON SI(111) SUBSTRATES

被引：34

作者：

CHENG, YT ^{[1
]}

CHEN, YL ^{[1
]}

KARMARKAR, MM ^{[1
]}

MENG, WJ ^{[1
]}

机构：

[1] WAYNE STATE UNIV,DETROIT,MI 48202

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.106312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial alpha-Fe films have been grown on HF cleaned Si (111) substrates at 30-degrees-C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional-theta - 2-theta x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe (111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[11BAR0] direction is parallel to the Si[11BAR0] direction in the plane of the substrate.

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页码：953 / 955

页数：3

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