ON THE SYSTEMATIC ANALYTICAL SOLUTIONS FOR MINORITY-CARRIER TRANSPORT IN NONUNIFORM DOPED SEMICONDUCTORS - APPLICATION TO SOLAR-CELLS

被引：30

作者：

CUEVAS, A

MERCHAN, R

RAMOS, JC

机构：

[1] Departamento de Electronica Física, E.T.S.I. Telecomunicació n, Universidad Politecnica de Madrid, 28040, Madrid

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/16.214751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition developed by Park et al. [1] and Bisschop et al. [2] are modified so that they conform to the definition of order of a polynomial expression. The new approximated solutions are simpler and can be calculated considerably faster than the original ones.

引用

页码：1181 / 1183

页数：3

共 6 条

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BISSCHOP, FJ ;

VERHOEF, LA ;

SINKE, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :358-364

[3] REVIEW OF ANALYTICAL MODELS FOR THE STUDY OF HIGHLY DOPED REGIONS OF SILICON DEVICES [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :553-560

[4] THE PHYSICS AND MODELING OF HEAVILY DOPED EMITTERS [J].

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SWANSON, RM .

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[5]

PARK JS, 1986, IEEE T ELECTRON DEV, V33, P240, DOI 10.1109/T-ED.1986.22473

[6]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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