EFFECTS OF ANNEALING ON ELECTRICAL PROPERTIES OF HGTE CRYSTALS

被引:14
作者
OKAZAKI, T [1 ]
SHOGENJI, K [1 ]
机构
[1] SHIZUOKA UNIV,FAC EDUC,SHIZUOKA,JAPAN
关键词
D O I
10.1016/0022-3697(75)90071-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:439 / 443
页数:5
相关论文
共 23 条
[1]  
BEER AC, 1963, SOLID STATE PHYSI S4
[2]  
CARLSON RO, 1958, PHYS REV, V111, P467
[3]   THE ELECTRICAL AND THERMOELECTRICAL PROPERTIES OF HGTE IN THE TEMPERATURE RANGE OF INTRINSIC CONDUCTIVITY [J].
DZIUBA, Z ;
ZAKRZEWSKI, T .
PHYSICA STATUS SOLIDI, 1964, 7 (03) :1019-1025
[4]   ELECTRICAL PROPERTIES OF MERCURY TELLURIDE [J].
GIRIAT, W .
BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (02) :151-&
[5]  
GROVES S, 1964, 7 P INT C PHYS SEM, P41
[6]   INTERBAND MAGNETOREFLECTION AND BAND STRUCTURE OF HGTE [J].
GROVES, SH ;
BROWN, RN ;
PIDGEON, CR .
PHYSICAL REVIEW, 1967, 161 (03) :779-&
[8]   PREPARATION AND ELECTRICAL PROPERTIES OF MERCURY TELLURIDE [J].
HARMAN, TC ;
LOGAN, MJ ;
GOERING, HL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) :228-235
[9]   HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2 DEGREES K AND 77 DEGREES K [J].
HARMAN, TC ;
HONIG, JM ;
TRENT, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :1995-&
[10]   BAND STRUCTURE OF HGTE AND HGTE-CDTE ALLOYS [J].
HARMAN, TC ;
KLEINER, WH ;
STRAUSS, AJ ;
WRIGHT, GB ;
MAVROIDES, JG ;
HONIG, JM ;
DICKEY, DH .
SOLID STATE COMMUNICATIONS, 1964, 2 (10) :305-308