MATERIALS FOR ADVANCED STUDIES AND DEVICES

[1] BECHER PF, 1986, FRACTURE MECHANISMS, P61

[2] BERRIER A, 1986, UNPUB

[3] BRUPBACHER JM, 1983, UNPUB

[4] BUCHNER SP, 1986, UNPUB

[5] CHERN J, 1987, UNPUB

[6] ULTRAHIGH-POWER SEMICONDUCTOR DIODE-LASER ARRAYS [J]. SCIENCE, 1987, 237 (4820) : 1305 - 1309

[7] USE OF HYDRATION INHIBITORS TO IMPROVE BOND DURABILITY OF ALUMINUM ADHESIVE JOINTS [J]. JOURNAL OF MATERIALS SCIENCE, 1985, 20 (03) : 975 - 988

[8] DJORDJEVIC BB, 1986, UNPUB

[9] DJORDJEVIC BB, 1986, Patent No. 4507969

[10] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[1] BECHER PF, 1986, FRACTURE MECHANISMS, P61

[2] BERRIER A, 1986, UNPUB

[3] BRUPBACHER JM, 1983, UNPUB

[4] BUCHNER SP, 1986, UNPUB

[5] CHERN J, 1987, UNPUB

[6] ULTRAHIGH-POWER SEMICONDUCTOR DIODE-LASER ARRAYS [J]. SCIENCE, 1987, 237 (4820) : 1305 - 1309

[7] USE OF HYDRATION INHIBITORS TO IMPROVE BOND DURABILITY OF ALUMINUM ADHESIVE JOINTS [J]. JOURNAL OF MATERIALS SCIENCE, 1985, 20 (03) : 975 - 988

[8] DJORDJEVIC BB, 1986, UNPUB

[9] DJORDJEVIC BB, 1986, Patent No. 4507969

[10] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399