FILAMENTARY INJECTION IN SEMI-INSULATING SILICON

[1] ALAGUILLAUME B, 1960, SOLID STATE PHYSIC 1, V1, P294

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &

[3] BOK J, 1961, 1960 P INT C SEM PHY, P138

[4] COBINE JD, 1941, GASEOUS CONDUCTORS, P233

[5] DESIRANT, 1960, SOLID STATE PHY 1 ED, V1, P294

[6] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1378 - &

[7] Gurney R. W., 1940, ELECT PROCESSES IONI, P172

[8] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &

[9] DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &

[10] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J]. PHYSICAL REVIEW, 1961, 121 (01): : 26 - &

[1] ALAGUILLAUME B, 1960, SOLID STATE PHYSIC 1, V1, P294

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &

[3] BOK J, 1961, 1960 P INT C SEM PHY, P138

[4] COBINE JD, 1941, GASEOUS CONDUCTORS, P233

[5] DESIRANT, 1960, SOLID STATE PHY 1 ED, V1, P294

[6] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1378 - &

[7] Gurney R. W., 1940, ELECT PROCESSES IONI, P172

[8] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &

[9] DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &

[10] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J]. PHYSICAL REVIEW, 1961, 121 (01): : 26 - &