IMPACT IONIZATION AVALANCHE BREAKDOWN IN SHORT CRYSTAL REGIONS OF P-GE

被引：15

作者：

CLAUSS, W ^{[1
]}

RAU, U ^{[1
]}

PARISI, J ^{[1
]}

PEINKE, J ^{[1
]}

HUEBENER, RP ^{[1
]}

LEIER, H ^{[1
]}

FORCHEL, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 06期

关键词：

D O I：

10.1063/1.345419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low-temperature impact ionization avalanche breakdown in p-Ge is investigated on a series of samples with various lengths of the electrically active region located between the ohmic contacts. We have studied the breakdown behavior as a function of the contact distance together with the response to an applied magnetic field. A simple model considering the specific hot-carrier situation in the prebreakdown regime can explain the experimental results.

引用

页码：2980 / 2984

页数：5

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