POLYCRYSTALLINE DIAMOND PRESSURE SENSOR

被引：34

作者：

WUR, DR

DAVIDSON, JL

KANG, WP

KINSER, DL

机构：

[1] Vanderbilt Univ, Nashville

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 1995年 / 4卷 / 01期

关键词：

D O I：

10.1109/84.365368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The piezoresistance and other characteristics of boron doped polycrystalline diamond films (PDF's) mere determined by analyzing free-standing films that had been formed on silicon. These structures were adhered to a dielectric substrate, and from bending stresses a gauge factor was estimated. Subsequently, a monolithic all-diamond pressure sensor was designed and fabricated, whereby doped diamond resistors reside on a dielectric diamond substrate diaphragm, The process and piezoresistance behavior of their structure is described [87].

引用

页码：34 / 41

页数：8

共 41 条

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