HIGH-POWER AND HIGH-FREQUENCY OPERATION OF INGAASP/INP LASERS AT 1.3-MU-M

被引：3

作者：

CHEN, TR

ZHAO, B

ZHUANG, YH

YARIV, A

BLAUVELT, H

BARCHAIM, N

机构：

[1] California Institute of Technology, Pasadena, CA

[2] Ortel Corporation, Alhambra, CA, 91803

来源：

FIBER AND INTEGRATED OPTICS | 1990年 / 9卷 / 04期

关键词：

D O I：

10.1080/01468039008202923

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on p-InP substrate. In a cavity length of 300-mu-m, a maximum continuous wave (CW) power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed.

引用

页码：347 / 366

页数：20

共 23 条

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