FORMATION OF VISIBLE PHOTOLUMINESCENCE BANDS IN SI+-IMPLANTED SILICA GLASSES AND THERMAL OXIDE-FILMS ON CRYSTALLINE SI

被引：6

作者：

SHIMIZUIWAYAMA, T ^{[1
]}

FUJITA, K ^{[1
]}

AKAI, M ^{[1
]}

NAKAO, S ^{[1
]}

SAITOH, K ^{[1
]}

机构：

[1] NATL IND RES INST NAGOYA, KITA KU, NAGOYA, AICHI 462, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00122-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence in Si+-implanted silica glasses and thermal oxide films has been studied, as-implanted and subsequent to annealing. Si ions were implanted at room temperature or liquid nitrogen temperature to a fluence of similar to 10(17) ions/cm(2). Two visible luminescence bands were found in both silica glasses and thermal oxide films: one peaked around 2.0 eV, observed in as-implanted specimens and annealed completely at about 600 degrees C; the other peaked around 1.7 eV, observed only after heating specimens to about 1100 degrees C, the temperature at which Si segregates from SiOx. In addition, a periodic interference pattern in the luminescence spectra was observed only in ion implanted thermal oxide films. It was found that the peak energy of the luminescence band around 2.0 eV depends on the fluences of the implanted Si ions and implantation temperatures, but that of the luminescence band around 1.7 eV does not. It was also found that the 2.0 eV band anneals in parallel to the oxygen vacancy (E') centers, and that the Raman lines due to Si-Si bonds grow and the interference patterns in optical absorption spectrum are induced by annealing Si+-implanted specimens at higher temperature. Based on these studies, the 2.0 eV band is ascribed to electron-hole recombination in Si-rich SiO2 and the 1.7 eV band to electron-hole recombination in the interface between the Si nanocrystal and the SiO2 formed by segregation of crystalline Si from SiOx.

引用

页码：112 / 118

页数：7

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