INTERVALLEY TRANSFER OF HOT ELECTRONS IN GALLIUM ARSENIDE

[1] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[2] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[4] HEEK S, 1965, PRIVATE COMMUNICATIO

[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[6] HILSUM C, 1964, P INT C PHYS SEMICON, P1127

[7] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[9] STRATTON R, 1958, P PHYS SOC LONDON, VA246, P406

[10] CRYSTAL DYNAMICS OF GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1963, 132 (06): : 2410 - +

[1] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[2] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[4] HEEK S, 1965, PRIVATE COMMUNICATIO

[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[6] HILSUM C, 1964, P INT C PHYS SEMICON, P1127

[7] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[9] STRATTON R, 1958, P PHYS SOC LONDON, VA246, P406

[10] CRYSTAL DYNAMICS OF GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1963, 132 (06): : 2410 - +