CHARACTERIZATION OF THE INVERSE-NARROW-WIDTH EFFECT

被引：29

作者：

AKERS, LA ^{[1
]}

SUGINO, M ^{[1
]}

FORD, JM ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND RES & DEV LAB,PHOENIX,AZ 85008

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2476 / 2484

页数：9

共 13 条

[1]

Akers L. A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P80

[2] A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT [J].

AKERS, LA ;

BEGUWALA, MME ;

CUSTODE, FZ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) :1490-1495

[3] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J].

AKERS, LA ;

SANCHEZ, JJ .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :621-641

[4] AN ANALYTICAL EXPRESSION FOR THE THRESHOLD VOLTAGE OF A SMALL GEOMETRY MOSFET [J].

AKERS, LA .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :621-627

[5] THE INVERSE-NARROW-WIDTH EFFECT [J].

AKERS, LA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :419-421

[6]

AKERS LA, 1985, SIAM TECH ABSTR, pA22

[7] 3-DIMENSIONAL SIMULATION OF INVERSE NARROW-CHANNEL EFFECT [J].

SHIGYO, N ;

KONAKA, M ;

DANG, RLM .

ELECTRONICS LETTERS, 1982, 18 (06) :274-275

[8] SUBTHRESHOLD CURRENT IN OXIDE ISOLATED STRUCTURES [J].

SUGINO, M ;

AKERS, LA .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :114-115

[9] OPTIMUM P-CHANNEL ISOLATION STRUCTURE FOR CMOS [J].

SUGINO, M ;

AKERS, LA ;

FORD, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1823-1829

[10] SUB-THRESHOLD CONDUCTION IN MOSFETS [J].

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :337-350

← 1 2 →