ON THE INTENSITY DEPENDENCE OF THE PHOTOCONDUCTIVITY IN A-SI-H

被引：14

作者：

EVANGELISTI, F

FIORINI, P

FORTUNATO, G

GIOVANNELLA, C

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 47卷 / 02期

关键词：

D O I：

10.1016/0038-1098(83)90619-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：107 / 110

页数：4

共 14 条

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[2]

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[3]

EVANGELISTI F, UNPUB J NONCRYST SOL

[4] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[5]

JACKSON WB, 1981, 9TH P INT C AM LIQ S, P293

[6] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[7]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[8]

REDFIELD D, UNPUB SOLID STATE CO

[9]

Rose A, 1963, CONCEPTS PHOTOCONDUC

[10]

STAEBLER DL, 1977, APPL PHYS LETT, V31, P4

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