PASSIVE-MODE LOCKING AND Q-SWITCHING OF AN ERBIUM-3 MU-M LASER USING THIN INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

VODOPYANOV, KL

LUKASHEV, AV

PHILLIPS, CC

FERGUSON, IT

机构：

[1] ACAD SCI USSR,INST GEN PHYS,MOSCOW 117942,USSR

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,DEPT PHYS,LONDON SW7 2AZ,ENGLAND

[3] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2AZ,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Passive mode locking and Q switching has been achieved for the first time in an Er3 + :YSGG laser at lambda = 2.8-mu-m using ultrathin single-crystal InAs epilayers grown on GaAs substrate which were subsequently bombarded with 15 keV protons at a dose of 10(13) cm -2. The bleaching effect was due to a dynamic Moss-Burstein mechanism with a fast (< 100 ps) recovery time. In the case of passive mode locking, pulses of 10 MW power were generated at lambda = 2.8-mu-m.

引用

页码：1658 / 1660

页数：3

共 16 条

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[2]

CESAR CL, 1990, ULTRAFAST PHENOMENA, V7, P17

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