DETERMINATION OF SURFACE RECOMBINATION VELOCITY OF EXCESS CARRIERS IN AMORPHOUS-SILICON USING THE SSPG TECHNIQUE

被引：2

作者：

HARIDIM, M

KURIN, E

WEISER, K

MELL, H

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

[2] UNIV MARBURG,FACHBEREICH PHYS,W-3550 MARBURG,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 141卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(05)80525-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The steady state photocarrier grating (SSPG) technique is used to determine the surface recombination velocity in a-Si:H without changing the wavelength of the light producing the photocarriers. This method requires knowledge of the absorption coefficient and the ambipolar mobility of the carriers. In a-Si:H, the surface recombination velocity is determined by this method to be about 100 cm/s.

引用

页码：119 / 122

页数：4

共 21 条

[1]

BALBERG I, 1987, APPL PHYS LETT, V53, P1949

[2]

BALBERG I, 1990, J APPL PHYS, P6329

[3]

BLAIS PD, 1980, ASTM STP, V712

[4]

Cody G D, 1984, SEMICONDUCTORS SEM B

[5]

EICHLER HJ, 1986, LASER INDUCED DYNAMI, pCH2

[6]

HARIDIM H, IN PRESS

[7] CARRIER TRANSPORT PROPERTY IN THE AMORPHOUS-SILICON AMORPHOUS-SILICON CARBIDE MULTILAYER STUDIED BY THE TRANSIENT GRATING TECHNIQUE [J].

HATTORI, K ;

MORI, T ;

OKAMOTO, H ;

HAMAKAWA, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (16) :1259-1261

[8]

KUMORO S, 1983, APPL PHYS LETT, V42, P79

[9] PHOTOTRANSPORT UNDER THE PRESENCE OF A SMALL STEADY-STATE PHOTOCARRIER GRATING [J].

LI, YM .

PHYSICAL REVIEW B, 1990, 42 (14) :9025-9032

[10]

MARSHALL JM, 1989, AMORPHOUS SILICON RE, VB, P799

← 1 2 3 →