REACTIVE ION ETCHING OF SILICON-OXIDES WITH AMMONIA AND TRIFLUOROMETHANE - THE ROLE OF NITROGEN IN THE DISCHARGE

被引:18
作者
SMOLINSKY, G
TRUESDALE, EA
WANG, DNK
MAYDAN, D
机构
关键词
D O I
10.1149/1.2124011
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1036 / 1040
页数:5
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