PROTECTION OF NORMAL-GAAS PHOTOANODES BY PHOTOELECTROCHEMICAL GRAFTING OF POLY (3-METHYL-THIOPHENE) AND POLY (3,4-DIMETHYL-THIOPHENE) FILMS

被引：56

作者：

HOROWITZ, G

TOURILLON, G

GARNIER, F

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 01期

关键词：

D O I：

10.1149/1.2115498

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：151 / 156

页数：6

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