OBSERVATIONS ON PULSE-HEIGHT DEFECT FOR HELIUM IONS OF ENERGIES LESS-THAN 30 KEV IN SILICON

被引：8

作者：

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 138卷 / 04期

关键词：

D O I：

10.1016/0029-554X(76)90016-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：677 / 679

页数：3

共 11 条

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CAMPBELL, RD
LIN, RP
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (10) : 1510 - 1512
[2] FORCINAL G, 1969, NAS1593, P37
[3] PULSE HEIGHT DEFECT AND ENERGY DISPERSION IN SEMICONDUCTOR DETECTORS
HAINES, EL
WHITEHEAD, AB
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (02) : 190 - +
[4] PULSE HEIGHT DEFECT IN SILICON SURFACE BARRIER DECTECTORS
HANSEN, NJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 96 (03): : 373 - +
[5] HSIEH KC, TO BE PUBLISHED
[6] LINDHARD L, 1963, K DAN VIDENSK SELSK, V33, P1
[7] Muller E W, 1969, FIELD ION MICROSCOPY
[8] Northcliffe L. S., 1970, NUCL DATA A, V7, P233
[9] NORTHCLIFFE LC, 1964, NASNRC1133 NAT AC SC, P353
[10] RAY JA, 1968, IEEE T NUCL SCI, V15, P475