TEMPERATURE-DEPENDENCE OF SPONTANEOUS EMISSION IN GAAS-ALGAAS QUANTUM WELL LASERS

被引：13

作者：

BLOOD, P

KUCHARSKA, AI

FOXON, CT

GRIFFITHS, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1167 / 1169

页数：3

共 9 条

[1] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

COLAK, S ;

KUCHARSKA, AI .

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[2] INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

FLETCHER, ED ;

WOODBRIDGE, K ;

HEASMAN, KC ;

ADAMS, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1459-1468

[3]

Blood P., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V861, P61, DOI 10.1117/12.943409

[4] OBSERVATIONS OF BARRIER RECOMBINATION IN GAAS-ALGAAS QUANTUM WELL STRUCTURES [J].

BLOOD, P ;

TSUI, ESM ;

FLETCHER, ED .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2218-2220

[5]

Blood P., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V861, P34, DOI 10.1117/12.943405

[6] BAND MIXING EFFECTS ON QUANTUM-WELL GAIN [J].

COLAK, S ;

EPPENGA, R ;

SCHUURMANS, MFH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :960-968

[7] RELATIONS BETWEEN THE T0 VALUES OF BULK AND QUANTUM-WELL GAAS [J].

HAUG, A .

APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1987, 44 (03) :151-153

[8]

KUCHARSKA AI, 1987, P SPIE, V800, P34

[9] LIFETIME BROADENING OF A PARABOLIC BAND EDGE OF A PURE SEMICONDUCTOR AT VARIOUS TEMPERATURES [J].

LANDSBERG, PT ;

ROBBINS, DJ .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :137-141

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