STRUCTURAL AND ELECTRICAL-PROPERTIES OF P-DOPED AND B-DOPED POLYCRYSTALLINE SILICON BY PLASMA-ENHANCED CVD AT 700-DEGREES-C

被引：3

作者：

HASEGAWA, S

MORITA, M

KURATA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 04期

关键词：

D O I：

10.1143/JJAP.28.L522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L522 / L524

页数：3

共 12 条

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[7]

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[9] THE EFFECT OF LOW-PRESSURE ON THE STRUCTURE OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

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