NONLINEAR-OPTICAL ABSORPTION OF GAAS QUANTUM WIRES

被引:29
作者
DNEPROVSKII, V [1 ]
GUSHINA, N [1 ]
PAVLOV, O [1 ]
POBORCHII, V [1 ]
SALAMATINA, I [1 ]
ZHUKOV, E [1 ]
机构
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
关键词
D O I
10.1016/0375-9601(95)00427-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nonlinear optical absorption at discrete frequencies (bleaching bands) has been observed for GaAs quantum wires in chrysotile asbestos nanotubes with average diameter approximate to 6 nm. The induced decrease of absorption has been explained by filling of the size-quantized energy levels of quantum wires with nonequilibrium carriers (saturation effect). Strong (chi((3))= 10(-8) e.s.u.) and fast (relaxation time less than or equal to 50 ps) third order optical nonlinearity has been determined.
引用
收藏
页码:59 / 62
页数:4
相关论文
共 8 条
[1]   QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].
ARAKAWA, Y ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1887-1899
[2]   LIQUIDS IN ULTRATHIN CHANNELS (FIBERED AND CLUSTERED CRYSTALS) [J].
BOGOMOLOV, VN .
USPEKHI FIZICHESKIKH NAUK, 1978, 124 (01) :171-182
[3]   STRONG OPTICAL NONLINEARITIES AND LASER-EMISSION OF SEMICONDUCTOR MICROCRYSTALS [J].
DNEPROVSKII, VS ;
KLIMOV, VI ;
OKOROKOV, DK ;
VANDYSHEV, YV .
SOLID STATE COMMUNICATIONS, 1992, 81 (03) :227-230
[4]   CYLINDRICAL GAAS QUANTUM WIRES INCORPORATED WITHIN CHRYSOTILE ASBESTOS NANOTUBES - FABRICATION AND POLARIZED OPTICAL-ABSORPTION SPECTRA [J].
POBORCHII, VV ;
IVANOVA, MS ;
SALAMATINA, IA .
SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (02) :133-135
[5]   THEORY OF THE LINEAR AND NONLINEAR OPTICAL-PROPERTIES OF SEMICONDUCTOR MICROCRYSTALLITES [J].
SCHMITTRINK, S ;
MILLER, DAB ;
CHEMLA, DS .
PHYSICAL REVIEW B, 1987, 35 (15) :8113-8125
[6]   NEW QUANTUM STRUCTURES [J].
SUNDARAM, M ;
CHALMERS, SA ;
HOPKINS, PF ;
GOSSARD, AC .
SCIENCE, 1991, 254 (5036) :1326-1335
[7]  
WEIGSCHEIDER W, 1993, PHYS REV LETT, V71, P4071
[8]   GAIN SPECTRA OF QUANTUM WIRES WITH INHOMOGENEOUS BROADENING [J].
ZAREM, H ;
VAHALA, K ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (04) :705-712