ASYMMETRIC FREQUENCY-RESPONSE OF SEMICONDUCTOR-LASER AMPLIFIERS

被引：14

作者：

NAKAI, T

ITO, R

OGASAWARA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.L680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L680 / L682

页数：3

共 11 条

[1] TRANSIENT FREQUENCY AND TEMPERATURE-VARIATION OF GALNPAS LASERS UNDER PULSED EXCITATION [J].

ITO, R ;

SUYAMA, M ;

OGASAWARA, N .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :214-216

[2] EXPERIMENTAL-OBSERVATION OF ASYMMETRIC DETUNING CHARACTERISTICS IN SEMICONDUCTOR-LASER INJECTION LOCKING [J].

KOBAYASHI, K ;

NISHIMOTO, H ;

LANG, R .

ELECTRONICS LETTERS, 1982, 18 (02) :54-56

[3] OPTICAL FM SIGNAL AMPLIFICATION BY INJECTION LOCKED AND RESONANT TYPE SEMICONDUCTOR-LASER AMPLIFIERS [J].

KOBAYASHI, S ;

KIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) :575-581

[4]

KOBAYASHI S, 1981, IEEE J QUANTUM ELECT, V17, P681, DOI 10.1109/JQE.1981.1071166

[5] GAIN AND SATURATION POWER OF RESONANT ALGAAS LASER-AMPLIFIER [J].

KOBAYASHI, S ;

KIMURA, T .

ELECTRONICS LETTERS, 1980, 16 (06) :230-232

[6]

LANG R, 1976, IEEE J QUANTUM ELECT, V12, P194, DOI 10.1109/JQE.1976.1069116

[7] INJECTION LOCKING PROPERTIES OF A SEMICONDUCTOR-LASER [J].

LANG, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) :976-983

[8] GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS [J].

MUKAI, T ;

YAMAMOTO, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) :1028-1034

[9] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J].

NAKAMURA, M ;

AIKI, K ;

CHINONE, N ;

ITO, R ;

UMEDA, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4644-4648

[10] INJECTED-CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN SEMICONDUCTOR-LASERS [J].

OLSSON, A ;

TANG, CL .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :24-26

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