A 140-GHZ MONOLITHIC LOW-NOISE AMPLIFIER

被引：23

作者：

WANG, H

LAI, R

LO, DCW

STREIT, DC

LIU, PH

DIA, RM

POSPIESZALSKI, MW

BERENZ, J

机构：

[1] TRW Electronic Systems and Technology Division, Redondo, Beach

[2] National Radio Astronomy Observatory., Charlottesville

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 05期

关键词：

D O I：

10.1109/75.374081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-mu m pseudomorphic InAlAs/InGaAs/InP low noise HEMT technology, A two-stage single-ended 140-GHz monolithic LNA has been designed, fabricated and tested, It exhibits a measured small signal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GHz. This is the highest frequency monolithic amplifier ever reported using three terminal devices.

引用

页码：150 / 152

页数：3

共 11 条

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[2]

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